Landolt-Börnstein - Group III Condensed Matter
Volume 41A2β 2003

Semiconductors · Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

Editors: O. Madelung, U. Rössler, M. Schulz
ISBN: 978-3-540-43086-5 (Print) 978-3-540-31358-8 (Online)
DOI: 10.1007/b83098

Table of contents (206 documents)

  1. Online Document 1

    Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds. · List of symbols

  2. Online Document 2

    silicon carbide (SiC), general characterization

  3. Online Document 3

    silicon carbide (SiC), stacking order and number of inequivalent lattice sites in SiC

  4. Online Document 4

    silicon carbide (SiC), solubility of impurities

  5. Online Document 5

    silicon carbide (SiC), diffusion of impurities

  6. Online Document 6

    silicon carbide (SiC), impurities and defect levels, general

  7. Online Document 7

    silicon carbide (SiC), energy levels and capture cross sections, identified defect centers

  8. Online Document 8

    silicon carbide (SiC), energy levels and capture cross sections, defect centers not identified

  9. Online Document 9

    silicon carbide (SiC), defects in SiC

  10. Online Document 10

    silicon carbide (SiC), optical properties of impurities and other defects: shallow donors

  11. Online Document 11

    silicon carbide (SiC), optical properties of impurities and other defects: acceptors Al, Ga, B and Be

  12. Online Document 12

    silicon carbide (SiC), optical properties of impurities and other defects: transition metals

  13. Online Document 13

    silicon carbide (SiC), optical properties of impurities and other defects: rare earth elements: erbium

  14. Online Document 14

    silicon carbide (SiC), optical properties of impurities and other defects: hydrogen

  15. Online Document 15

    silicon carbide (SiC), optical properties of impurities and other defects associated with radiation damage, misc. defects

  16. Online Document 16

    boron nitride (BN), impurities in cubic and hexagonal boron nitride

  17. Online Document 17

    boron nitride (BN), deep defect states in cubic boron nitride

  18. Online Document 18

    boron phosphide (BP), deep defect states

  19. Online Document 19

    gallium nitride (GaN), solubility and diffusion of impurities

  20. Online Document 20

    gallium nitride (GaN), shallow impurities

  21. Online Document 21

    gallium nitride (GaN), luminescence peak energies

  22. Online Document 22

    gallium nitride (GaN), properties of bound excitons

  23. Online Document 23

    gallium nitride (GaN), properties of deep defect states

  24. Online Document 24

    gallium nitride (GaN), esr and odmr data on hexagonal GaN

  25. Online Document 25

    gallium phosphide (GaP), solubility and diffusion of impurities

  26. Online Document 26

    gallium phosphide (GaP), vibrational modes of impurities and defects

  27. Online Document 27

    gallium phosphide (GaP), vibrational modes of substitutional impurity complexes

  28. Online Document 28

    gallium phosphide (GaP), vibrational modes of irradiation defects

  29. Online Document 29

    gallium phosphide (GaP), vibrational modes of hydrogen paired with impurity atoms

  30. Online Document 30

    gallium phosphide (GaP), shallow impurities, general remarks

  31. Online Document 31

    gallium phosphide (GaP), binding energies of donors

  32. Online Document 32

    gallium phosphide (GaP), splittings of 1S donor ground states

  33. Online Document 33

    gallium phosphide (GaP), excited states of donors

  34. Online Document 34

    gallium phosphide (GaP), binding energies of acceptors relative to the valence band maximum

  35. Online Document 35

    gallium phosphide (GaP), excited states of acceptors

  36. Online Document 36

    gallium phosphide (GaP), deformation potential of impurity states

  37. Online Document 37

    gallium phosphide (GaP), spin-orbit coupling in bound hole states

  38. Online Document 38

    gallium phosphide (GaP), bound excitons, general remarks

  39. Online Document 39

    gallium phosphide (GaP), localization energies and splitting of excitons bound to donors

  40. Online Document 40

    gallium phosphide (GaP), localization energies and splitting of excitons bound to acceptors

  41. Online Document 41

    gallium phosphide (GaP), excitons bound to isoelectronic substituents and other neutral centers, general remarks

  42. Online Document 42

    gallium phosphide (GaP), localization energies of bound excitons

  43. Online Document 43

    gallium phosphide (GaP), J - J coupling and crystal field splittings of bound excitons

  44. Online Document 44

    gallium phosphide (GaP), scattering cross-sections s for the no-phonon creation of free excitons

  45. Online Document 45

    gallium phosphide (GaP), localization energies of multiple bound excitons

  46. Online Document 46

    gallium phosphide (GaP), transition lifetimes of bound excitons

  47. Online Document 47

    gallium phosphide (GaP), ESR and ENDOR data for shallow impurities

  48. Online Document 48

    gallium phosphide (GaP), ESR data of shallow acceptors

  49. Online Document 49

    gallium phosphide (GaP), deep defects, general remarks

  50. Online Document 50

    gallium phosphide (GaP), energies and capture cross sections of electron traps

  51. Online Document 51

    gallium phosphide (GaP), nitrogen-related electron traps in GaP

  52. Online Document 52

    gallium phosphide (GaP), energies and capture cross sections of hole traps

  53. Online Document 53

    gallium phosphide (GaP), properties of deep defect states induced by high energy irradiation

  54. Online Document 54

    gallium phosphide (GaP), properties of electron and hole traps induced by proton irradiation

  55. Online Document 55

    gallium phosphide (GaP), optical properties of deep defects: luminescence bands

  56. Online Document 56

    gallium phosphide (GaP), optical properties of deep defects: optical absorption bands

  57. Online Document 57

    gallium phosphide (GaP), ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(4)

  58. Online Document 58

    gallium phosphide (GaP), ESR, ENDOR, and ODMR data: phosphorus antisite P(Ga)P(3) Y

  59. Online Document 59

    gallium phosphide (GaP), ESR, ENDOR, and ODMR data: gallium vacancy

  60. Online Document 60

    gallium phosphide (GaP), ESR, ENDOR, and ODMR data: electron-irradiated GaP:Fe

  61. Online Document 61

    gallium phosphide (GaP), defect levels associated with transition metal impurities: energy levels

  62. Online Document 62

    gallium phosphide (GaP), defect levels associated with transition metal impurities: capture and emission data

  63. Online Document 63

    gallium phosphide (GaP), excited states of defects accociated with transition metal impurities

  64. Online Document 64

    gallium phosphide (GaP), optical properties of isolated, substitutional transition metal impurities

  65. Online Document 65

    gallium phosphide (GaP), optical properties related to transition metal complexes

  66. Online Document 66

    gallium phosphide (GaP), magnetic properties and ESR of isolated, substitutional transition metal impurities

  67. Online Document 67

    gallium phosphide (GaP), magnetic properties and ESR of transition metal impurities complexes

  68. Online Document 68

    gallium phosphide (GaP), properties of rare earth impurities

  69. Online Document 69

    gallium phosphide (GaP), irradiation effects in rare earths doped GaP

  70. Online Document 70

    gallium arsenide (GaAs), solubility of impurities

  71. Online Document 71

    gallium arsenide (GaAs), diffusion of impurities and defects, general

  72. Online Document 72

    gallium arsenide (GaAs), self-diffusion coefficients

  73. Online Document 73

    gallium arsenide (GaAs), impurity diffusion coefficients

  74. Online Document 74

    gallium arsenide (GaAs), diffusion of Zn in GaAs

  75. Online Document 75

    gallium arsenide (GaAs), vibrational modes of impurities and defects: isolated impurities

  76. Online Document 76

    gallium arsenide (GaAs), vibrational modes of impurities and defects: isotopic clusters

  77. Online Document 77

    gallium arsenide (GaAs), vibrational modes of impurities and defects: substitutional impurity complexes

  78. Online Document 78

    gallium arsenide (GaAs), vibrational modes of impurities and defects: lithium complexes

  79. Online Document 79

    gallium arsenide (GaAs), vibrational modes of impurities and defects: irradiation defects

  80. Online Document 80

    gallium arsenide (GaAs), calibration of local vibrational mode absorption lines

  81. Online Document 81

    gallium arsenide (GaAs), vibrational modes of impurities and defects: hydrogen complexes

  82. Online Document 82

    gallium arsenide (GaAs), shallow donors: chemical shifts, photoconductivity measurements and photoluminescence

  83. Online Document 83

    gallium arsenide (GaAs), binding energy of residual donors

  84. Online Document 84

    gallium arsenide (GaAs), bound exciton transition energies

  85. Online Document 85

    gallium arsenide (GaAs), shallow acceptors: ground state binding energies, general remarks

  86. Online Document 86

    gallium arsenide (GaAs), acceptor ground state binding energies

  87. Online Document 87

    gallium arsenide (GaAs), properties of acceptor excited states

  88. Online Document 88

    gallium arsenide (GaAs), energy splittings of excited acceptor states

  89. Online Document 89

    gallium arsenide (GaAs), transition energies of highly excited acceptor states

  90. Online Document 90

    gallium arsenide (GaAs), bound exciton lifetimes

  91. Online Document 91

    gallium arsenide (GaAs), shallow defects and impurity complexes: the 1.5040–1.5110 eV photoluminescence lines

  92. Online Document 92

    gallium arsenide (GaAs), shallow defects and impurity complexes: copper complexes

  93. Online Document 93

    gallium arsenide (GaAs), ESR data for shallow defects

  94. Online Document 94

    gallium arsenide (GaAs), heavy doping effects

  95. Online Document 95

    gallium arsenide (GaAs), intrinsic or unidentified deep defect states

  96. Online Document 96

    gallium arsenide (GaAs), electron traps (cross section not known)

  97. Online Document 97

    gallium arsenide (GaAs), electron traps (directly measured carrier cross sections)

  98. Online Document 98

    gallium arsenide (GaAs), hole traps (directly measured cross sections)

  99. Online Document 99

    gallium arsenide (GaAs), hole traps (cross section not measured)

  100. Online Document 100

    gallium arsenide (GaAs), radiation-induced deep defect states: electron traps induced by electron irradiation

  101. Online Document 101

    gallium arsenide (GaAs), radiation-induced deep defect states: hole traps induced by electron irradiation

  102. Online Document 102

    gallium arsenide (GaAs), electron traps induced by proton and heavy ion implantation

  103. Online Document 103

    gallium arsenide (GaAs), gallium vacancy

  104. Online Document 104

    gallium arsenide (GaAs), hole traps induced by proton and heavy ion implantation

  105. Online Document 105

    gallium arsenide (GaAs), low temperature grown GaAs

  106. Online Document 106

    gallium arsenide (GaAs), oxygen and hydrogen in GaAs

  107. Online Document 107

    gallium arsenide (GaAs), optical properties of deep defects, general remarks

  108. Online Document 108

    gallium arsenide (GaAs), photoluminescence bands

  109. Online Document 109

    gallium arsenide (GaAs), experimental results on the 0.67–0.68 eV photoluminescence band

  110. Online Document 110

    gallium arsenide (GaAs), experimental results on the 0.77–0.8 eV photoluminescence band

  111. Online Document 111

    gallium arsenide (GaAs), photoluminescence in n- and p-type GaAs

  112. Online Document 112

    gallium arsenide (GaAs), the EL2/As(Ga) defect

  113. Online Document 113

    gallium arsenide (GaAs), optical transitions in absorption related to the EL2 defect

  114. Online Document 114

    gallium arsenide (GaAs), optical bands related to the 78/203 meV acceptor

  115. Online Document 115

    gallium arsenide (GaAs), photoluminescence of low temperature grown GaAs

  116. Online Document 116

    gallium arsenide (GaAs), ESR, ENDOR, and ODMR data

  117. Online Document 117

    gallium arsenide (GaAs), properties of plastically deformed GaAs

  118. Online Document 118

    gallium arsenide (GaAs), properties of fast-electron-irradiated GaAs

  119. Online Document 119

    gallium arsenide (GaAs), energy levels of transition metal impurities

  120. Online Document 120

    gallium arsenide (GaAs), capture and emission data for transition metal impurities

  121. Online Document 121

    gallium arsenide (GaAs), excited states related to transition metal impurities

  122. Online Document 122

    gallium arsenide (GaAs), optical properties of isolated transition metal impurities

  123. Online Document 123

    gallium arsenide (GaAs), optical properties of transition metal impurity complexes

  124. Online Document 124

    gallium arsenide (GaAs), magnetic properties and ESR of transition metal impurities

  125. Online Document 125

    gallium arsenide (GaAs), magnetic properties of isolated, substitutional transition metal impurities

  126. Online Document 126

    gallium arsenide (GaAs), magnetic properties of transition metal complexes

  127. Online Document 127

    gallium arsenide (GaAs), properties of rare earth impurities

  128. Online Document 128

    gallium antimonide (GaSb), diffusion of impurities and defects

  129. Online Document 129

    gallium antimonide (GaSb), vibrational modes of impurities

  130. Online Document 130

    gallium antimonide (GaSb), shallow impurities and defects

  131. Online Document 131

    gallium antimonide (GaSb), bound excitons

  132. Online Document 132

    gallium antimonide (GaSb), deep defects

  133. Online Document 133

    gallium antimonide (GaSb), deep states introduced by donors

  134. Online Document 134

    gallium antimonide (GaSb), hole and electron traps

  135. Online Document 135

    gallium antimonide (GaSb), radiation induced deep defect states

  136. Online Document 136

    indium phosphide (InP), diffusion of impurities and defects

  137. Online Document 137

    indium phosphide (InP), vibrational modes of isolated impurities

  138. Online Document 138

    indium phosphide (InP), shallow impurities and defects: general remarks

  139. Online Document 139

    indium phosphide (InP), data from photoconductivity measurements

  140. Online Document 140

    indium phosphide (InP), data from photoluminescence (I)

  141. Online Document 141

    indium phosphide (InP), properties of the (D(+)X) exciton complex

  142. Online Document 142

    indium phosphide (InP), exciton impurity transition lifetime

  143. Online Document 143

    indium phosphide (InP), properties of acceptor impurities

  144. Online Document 144

    indium phosphide (InP), properties of excitons bound to acceptors

  145. Online Document 145

    indium phosphide (InP), acceptor excited states

  146. Online Document 146

    indium phosphide (InP), deformation potentials for bound holes

  147. Online Document 147

    indium phosphide (InP), ESR and ENDOR data: the electron g-factor

  148. Online Document 148

    indium phosphide (InP), deep impurities, general

  149. Online Document 149

    indium phosphide (InP), intrinsic or unidentified deep defect states

  150. Online Document 150

    indium phosphide (InP), radiation-induced deep defect states

  151. Online Document 151

    indium phosphide (InP), 1 MeV electron irradiation-induced hole traps, measured by DLTS

  152. Online Document 152

    indium phosphide (InP), data from photoluminescence (II)

  153. Online Document 153

    indium phosphide (InP), ESR and ODMR data

  154. Online Document 154

    indium phosphide (InP), energy levels of transition metal impurities

  155. Online Document 155

    indium phosphide (InP), capture and emission data of transition metal impurities

  156. Online Document 156

    indium phosphide (InP), excited states of transition metal impurities

  157. Online Document 157

    indium phosphide (InP), optical properties of transition metal impurities

  158. Online Document 158

    indium phosphide (InP), magnetic properties and ESR of transition metal impurities

  159. Online Document 159

    indium phosphide (InP), properties of rare earth impurities

  160. Online Document 160

    indium phosphide (InP), photoluminescence and optical spectrometry of rare earth impurities

  161. Online Document 161

    indium phosphide (InP), magnetic resonance of rare earths impurities

  162. Online Document 162

    indium phosphide (InP), irradiation effects of rare earths impurities

  163. Online Document 163

    indium arsenide (InAs), solubility of impurities

  164. Online Document 164

    indium arsenide (InAs), self-diffusion coefficients

  165. Online Document 165

    indium arsenide (InAs), impurity diffusion coefficients

  166. Online Document 166

    indium arsenide (InAs), vibrational modes of impurities

  167. Online Document 167

    indium arsenide (InAs), shallow impurities

  168. Online Document 168

    indium arsenide (InAs), deep defect states

  169. Online Document 169

    indium arsenide (InAs), transition metal impurities

  170. Online Document 170

    indium arsenide (InAs), magnetic properties of transition metal impurities

  171. Online Document 171

    indium antimonide (InSb), self-diffusion coefficients

  172. Online Document 172

    indium antimonide (InSb), diffusion coefficients of impurities

  173. Online Document 173

    indium antimonide (InSb), vibrational modes of substitutional impurities

  174. Online Document 174

    indium antimonide (InSb), binding energies of shallow impurities

  175. Online Document 175

    indium antimonide (InSb), bound excitons

  176. Online Document 176

    indium antimonide (InSb), deep impurities

  177. Online Document 177

    indium antimonide (InSb), radiation-induced defect states

  178. Online Document 178

    indium antimonide (InSb), transition metal impurities

  179. Online Document 179

    gallium arsenide phosphide (GaAs(1-x)P(x)), solubility and diffusion of impurities

  180. Online Document 180

    gallium arsenide phosphide (GaAs(1-x)P(x)), deep defect states

  181. Online Document 181

    gallium arsenide phosphide (GaAs(1-x)P(x)), transition metal impurities

  182. Online Document 182

    gallium arsenide antimonide (GaAs(1-x)Sb(x)), deep defect states

  183. Online Document 183

    indium arsenide phosphide (InAs(1-x)P(x)), solubility and diffusion of impurities

  184. Online Document 184

    gallium aluminum arsenide (Ga(1-x)Al(x)As), solubility and diffusion of impurities

  185. Online Document 185

    gallium aluminum arsenide (Ga(1-x)Al(x)As), shallow impurities and defects

  186. Online Document 186

    gallium aluminum arsenide (Ga(1-x)Al(x)As), deep defects

  187. Online Document 187

    gallium aluminum arsenide (Ga(1-x)Al(x)As), optical properties of deep defects

  188. Online Document 188

    gallium aluminum arsenide (Ga(1-x)Al(x)As), transition metal impurities

  189. Online Document 189

    gallium aluminum arsenide (Ga(1-x)Al(x)As), rare earth impurities

  190. Online Document 190

    gallium aluminum antimonide (Ga(1-x)Al(x)Sb), deep defect states

  191. Online Document 191

    gallium indium arsenide (Ga(1-x)In(x)As), solubility and diffusion of impurities

  192. Online Document 192

    gallium indium arsenide (Ga(1-x)In(x)As), defect levels, optical properties of impurities

  193. Online Document 193

    gallium indium phosphide (Ga(x)In(1-x)P), defect levels

  194. Online Document 194

    gallium indium phosphide (Ga(x)In(1-x)P), transition metal impurities

  195. Online Document 195

    gallium indium phosphide (Ga(x)In(1-x)P), rare earth impurities

  196. Online Document 196

    gallium indium arsenide phosphide (Ga(x)In(1-x)As(y)P(1-y)), impurities and defects

  197. Online Document 197

    gallium aluminum indium phosphide ((Ga(x)Al(1-x))(y)In(1-y)P), deep defects

  198. Online Document 198

    indium gallium aluminum arsenide ((Ga(x)Al(1-x))(y)In(1-y)As), deep defects

  199. Online Document 199

    gallium aluminum arsenide antimonide (Ga(x)Al(1-x)As(y)Sb(1-y)), deep defects

  200. Online Document 200

    aluminum nitride (AlN), impurities and defects

  201. Online Document 201

    aluminum arsenide (AlAs), vibrational modes of impurities

  202. Online Document 202

    aluminum arsenide (AlAs), shallow impurities and defects

  203. Online Document 203

    aluminum arsenide (AlAs), deep defect states

  204. Online Document 204

    aluminum antimonide (AlSb), vibrational modes

  205. Online Document 205

    aluminum antimonide (AlSb), shallow impurities

  206. Online Document 206

    aluminum antimonide (AlSb), deep impurities