Landolt-Börnstein - Group III Condensed Matter
Volume 34A 2013

Semiconductor Quantum Structures · Growth and Structuring

Editors: C. Klingshirn
ISBN: 978-3-540-63347-1 (Print) 978-3-540-68357-5 (Online)
DOI: 10.1007/978-3-540-68357-5

Table of contents (109 documents)

  1. Online Document 1

    1 Introduction to semiconductor quantum structures

    C. Klingshirn

  2. Online Document 2

    2 Growth of quasi two-dimensional structures

    C. Klingshirn

  3. Online Document 3

    3 Growth and preparation of quasi one-dimensional systems

    C. Klingshirn

  4. Online Document 4

    4 Growth and preparation of quasi zero-dimensional structures

    C. Klingshirn

  5. Online Document 5

    5.1 General remarks on group IV semiconductors and industrial needs

    E. Kasper

  6. Online Document 6

    5.2 Layer growth by epitaxy

    E. Kasper

  7. Online Document 7

    5.3 Quasi-two-dimensional systems (quantum wells)

    E. Kasper

  8. Online Document 8

    5.4 One-dimensional systems (quantum wires)

    E. Kasper

  9. Online Document 9

    5.5 Zero-dimensional systems (quantum dots)

    E. Kasper

  10. Online Document 10

    6.1 Growth and preparation of quantum wells on GaAs substrates

    C. Höfling, C. Schneider, A. Forchel

  11. Online Document 11

    6.2 Structuring and growth of quantum wires and nano-rods on GaAs

    C. Höfling, C. Schneider, A. Forchel

  12. Online Document 12

    6.3 Growth and preparation of quantum dots and nano crystals on GaAs substrates

    C. Höfling, C. Schneider, A. Forchel

  13. Online Document 13

    6.4.1 The role of substrates

    C. Höfling, C. Schneider, A. Forchel

  14. Online Document 14

    6.4.2 Different growth techniques

    C. Höfling, C. Schneider, A. Forchel

  15. Online Document 15

    6.4.3 Group III–nitride quantum wells

    C. Höfling, C. Schneider, A. Forchel

  16. Online Document 16

    6.4.4 Group III–nitride based quantum wires

    C. Höfling, C. Schneider, A. Forchel

  17. Online Document 17

    6.4.5 Group III–nitride based quantum dots

    C. Höfling, C. Schneider, A. Forchel

  18. Online Document 18

    6.4.6 Devices based on group III–nitrides

    C. Höfling, C. Schneider, A. Forchel

  19. Online Document 19

    6.5.1 Growth of GaInAs quantum wells on InP substrates

    C. Höfling, C. Schneider, A. Forchel

  20. Online Document 20

    6.5.2 Lithographically defined nanowires

    C. Höfling, C. Schneider, A. Forchel

  21. Online Document 21

    6.5.3 Growth and fabrication of InGaAsP nanowhiskers on InP and silicon substrates

    C. Höfling, C. Schneider, A. Forchel

  22. Online Document 22

    6.5.4 Site-controlled fabrication of nanowhiskers on InP substrate

    C. Höfling, C. Schneider, A. Forchel

  23. Online Document 23

    6.5.5 Epitaxial quantum dots grown on InP substrate

    C. Höfling, C. Schneider, A. Forchel

  24. Online Document 24

    6.5.6 Growth of InAs quantum dashes

    C. Höfling, C. Schneider, A. Forchel

  25. Online Document 25

    6.5.7 Site-selective growth of InAs quantum dots on InP

    C. Höfling, C. Schneider, A. Forchel

  26. Online Document 26

    6.6 Growth of quantum wells and quantum dots on GaSb substrates

    C. Höfling, C. Schneider, A. Forchel

  27. Online Document 27

    6.6.1 Growth of quantum wells in GaSb-based diode lasers

    C. Höfling, C. Schneider, A. Forchel

  28. Online Document 28

    6.6.2 Growth of quantum wells in GaSb-based type-II diode lasers

    C. Höfling, C. Schneider, A. Forchel

  29. Online Document 29

    6.6.3 Growth of quantum wells in GaSb-based quantum cascade laser structures

    C. Höfling, C. Schneider, A. Forchel

  30. Online Document 30

    6.6.4 Growth of quantum wells in GaSb-based interband cascade lasers

    C. Höfling, C. Schneider, A. Forchel

  31. Online Document 31

    6.6.5 Growth of quantum wells in GaSb-based superlattice detectors

    C. Höfling, C. Schneider, A. Forchel

  32. Online Document 32

    6.6.6 Growth of quantum dots on GaSb

    C. Höfling, C. Schneider, A. Forchel

  33. Online Document 33

    6.7 Growth and preparation of quantum dots and quantum wells on GaP substrates

    C. Höfling, C. Schneider, A. Forchel

  34. Online Document 34

    6.8 Properties of III-V materials on Si substrate

    C. Höfling, C. Schneider, A. Forchel

  35. Online Document 35

    6.9 Examples of III-V layers and nanostructures with diluted semiconductor materials

    C. Höfling, C. Schneider, A. Forchel

  36. Online Document 36

    7 Examples for the growth of nano-structures based on IIB-VI compounds

    C. Klingshirn

  37. Online Document 37

    7.1.1 Quantum wells and superlattices containing Hg

    C. Klingshirn

  38. Online Document 38

    7.1.2 Quantum wells and superlattices based on CdTe and its alloys

    C. Klingshirn

  39. Online Document 39

    7.1.3 Quantum wells and superlattices based on CdSe and its alloys

    C. Klingshirn

  40. Online Document 40

    7.1.4 Quantum wells and superlattices based on CdS and its alloys

    C. Klingshirn

  41. Online Document 41

    7.1.5 Quantum wells and superlattices based on ZnTe and its alloys

    C. Klingshirn

  42. Online Document 42

    7.1.6 Quantum wells and superlattices based on ZnSe and its alloys

    C. Klingshirn

  43. Online Document 43

    7.1.7 Quantum wells and superlattices based on ZnS and its alloys

    C. Klingshirn

  44. Online Document 44

    7.1.8 Quantum wells and superlattices based on ZnO and its alloys

    C. Klingshirn

  45. Online Document 45

    7.1.9 Quantum wells and superlattices containing diluted magnetic semiconductors in barrier and/or well

    C. Klingshirn

  46. Online Document 46

    7.2.1 Quantum wires containing Hg

    C. Klingshirn

  47. Online Document 47

    7.2.2 Quantum wires and nano rods based on CdTe and its alloys

    C. Klingshirn

  48. Online Document 48

    7.2.3 Quantum wires and nano rods based on CdSe and its alloys

    C. Klingshirn

  49. Online Document 49

    7.2.4 Quantum wires and nano rods based on CdS and its alloys

    C. Klingshirn

  50. Online Document 50

    7.2.5 Quantum wires and nano rods based on ZnTe and its alloys

    C. Klingshirn

  51. Online Document 51

    7.2.6 Quantum wires and nano rods based on ZnSe and its alloys

    C. Klingshirn

  52. Online Document 52

    7.2.7 Quantum wires and nano rods based on ZnS and its alloys

    C. Klingshirn

  53. Online Document 53

    7.2.8 Quantum wires and nano rods based on ZnO and its alloys

    C. Klingshirn

  54. Online Document 54

    7.2.9 Quantum wires and nano rods of diluted magnetic semiconductors

    C. Klingshirn

  55. Online Document 55

    7.3.1 Quantum dots and nano crystals containing Hg

    C. Klingshirn

  56. Online Document 56

    7.3.2 Quantum dots and nano crystals based on CdTe and its alloys

    C. Klingshirn

  57. Online Document 57

    7.3.3 Quantum dots and nano crystals based on CdSe and its alloys

    C. Klingshirn

  58. Online Document 58

    7.3.4 Quantum dots and nano crystals based on CdS and its alloys

    C. Klingshirn

  59. Online Document 59

    7.3.5 Quantum dots and nano crystals based on ZnTe and its alloys

    C. Klingshirn

  60. Online Document 60

    7.3.6 Quantum dots and nano crystals based on ZnSe and its alloys

    C. Klingshirn

  61. Online Document 61

    7.3.7 Quantum dots and nano crystals based on ZnS and its alloys

    C. Klingshirn

  62. Online Document 62

    7.3.8 Quantum dots and nano crystals based on ZnO and its alloys

    C. Klingshirn

  63. Online Document 63

    7.3.9 Quantum dots and nano crystals of diluted magnetic semiconductors

    C. Klingshirn

  64. Online Document 64

    7.4.1 Self-assembled quantum dots: Introduction

    F. Henneberger

  65. Online Document 65

    7.4.2 CdSe/ZnSe quantum dots

    F. Henneberger

  66. Online Document 66

    7.4.3 CdTe/ZnTe quantum dots

    F. Henneberger

  67. Online Document 67

    7.4.4 Diluted magnetic II-VI quantum dots

    F. Henneberger

  68. Online Document 68

    7.4.5 Other II-VI heterosystems

    F. Henneberger

  69. Online Document 69

    8.1 Examples for I-VII semiconductor compounds: General properties

    B. Hönerlage, P. Gilliot

  70. Online Document 70

    8.2 Quantum-well structures

    B. Hönerlage, P. Gilliot

  71. Online Document 71

    Growth and Structuring · 8.3 Quantum dots

    B. Hönerlage, P. Gilliot

  72. Online Document 72

    9.1 IV-VI semiconductors: General properties

    G. Springholz, G. Bauer

  73. Online Document 73

    9.2 Band-gap engineering by alloying

    G. Springholz, G. Bauer

  74. Online Document 74

    9.2.1 Pseudo-binary IV-VI alloys

    G. Springholz, G. Bauer

  75. Online Document 75

    9.2.2 Higher-band-gap alloys

    G. Springholz, G. Bauer

  76. Online Document 76

    9.3.1 Molecular beam epitaxy

    G. Springholz, G. Bauer

  77. Online Document 77

    9.3.2 Other epitaxial growth techniques

    G. Springholz, G. Bauer

  78. Online Document 78

    9.3.3 Substrate materials

    G. Springholz, G. Bauer

  79. Online Document 79

    9.3.4 Growth on BaF2 (111)

    G. Springholz, G. Bauer

  80. Online Document 80

    9.3.5 Growth on IV-VI substrates

    G. Springholz, G. Bauer

  81. Online Document 81

    9.3.6 Growth on KCl and NaCl

    G. Springholz, G. Bauer

  82. Online Document 82

    9.3.7 Growth on silicon

    G. Springholz, G. Bauer

  83. Online Document 83

    9.3.8 Growth on GaAs and CdTe

    G. Springholz, G. Bauer

  84. Online Document 84

    Growth and Structuring · 9.3.9 Doping

    G. Springholz, G. Bauer

  85. Online Document 85

    9.4.1 Growth and material systems

    G. Springholz, G. Bauer

  86. Online Document 86

    9.4.2 Structural properties

    G. Springholz, G. Bauer

  87. Online Document 87

    9.4.3 Theoretical description of confined states

    G. Springholz, G. Bauer

  88. Online Document 88

    9.4.4 Spectroscopic investigations of IV-VI quantum-well systems

    G. Springholz, G. Bauer

  89. Online Document 89

    9.4.5 Specific results for different material systems

    G. Springholz, G. Bauer

  90. Online Document 90

    9.4.6 Transport in 2D structures

    G. Springholz, G. Bauer

  91. Online Document 91

    9.5.1 Fabrication: lithography and nanowire growth

    G. Springholz, G. Bauer

  92. Online Document 92

    9.5.2 Transport in 1D structures

    G. Springholz, G. Bauer

  93. Online Document 93

    9.6 Self-assembled Stranski-Krastanow quantum dots

    G. Springholz, G. Bauer

  94. Online Document 94

    9.6.1 Growth of self-assembled lead-salt quantum dots

    G. Springholz, G. Bauer

  95. Online Document 95

    9.6.2 Ordering and stacking in quantum-dot superlattices

    G. Springholz, G. Bauer

  96. Online Document 96

    9.6.3 Ordering mechanisms

    G. Springholz, G. Bauer

  97. Online Document 97

    9.6.4 Optical and electronic properties

    G. Springholz, G. Bauer

  98. Online Document 98

    9.7 Quantum dots by phase separation and nanoprecipitation

    G. Springholz, G. Bauer

  99. Online Document 99

    9.7.1 Structural properties

    G. Springholz, G. Bauer

  100. Online Document 100

    9.7.2 Size control

    G. Springholz, G. Bauer

  101. Online Document 101

    9.7.3 Emission properties

    G. Springholz, G. Bauer

  102. Online Document 102

    9.7.4 Electroluminescence

    G. Springholz, G. Bauer

  103. Online Document 103

    9.8 Optoelectronic device applications

    G. Springholz, G. Bauer

  104. Online Document 104

    9.8.1 Mid-infrared diode lasers

    G. Springholz, G. Bauer

  105. Online Document 105

    9.8.2 Vertical-cavity surface-emitting lasers

    G. Springholz, G. Bauer

  106. Online Document 106

    9.8.3 Vertical-external-cavity surface-emitting lasers

    G. Springholz, G. Bauer

  107. Online Document 107

    9.8.4 Microdisk lasers

    G. Springholz, G. Bauer

  108. Online Document 108

    9.9 Thermoelectric devices

    G. Springholz, G. Bauer

  109. Online Document 109

    10 Conclusion and Outlook

    C. Klingshirn