Landolt-Börnstein - Group III Condensed Matter

gallium arsenide (GaAs), experimental results on the 0.77–0.8 eV photoluminescence band

Abstract

This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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Title
gallium arsenide (GaAs), experimental results on the 0.77–0.8 eV photoluminescence band
Book Title
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
Book DOI
10.1007/b83098
Chapter DOI
10.1007/10860305_110
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41A2β
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz
  • Cite this content

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