Landolt-Börnstein - Group III Condensed Matter

gallium arsenide (GaAs), properties of fast-electron-irradiated GaAs

Abstract

This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

Cite this page

References (21)

About this content

Title
gallium arsenide (GaAs), properties of fast-electron-irradiated GaAs
Book Title
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
Book DOI
10.1007/b83098
Chapter DOI
10.1007/10860305_118
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41A2β
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz
  • Cite this content

    Citation copied