Landolt-Börnstein - Group III Condensed Matter

Zinc silicon arsenide (ZnSiAs2) interband and intraband transitions

Abstract

This document is part of Subvolume E ‘Ternary Compounds, Organic Semiconductors’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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References (6)

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    Shay, T. L., Buehler, F., Wernick, T. H.: Phys. Rev. B3 (1971) 2004.

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    Sobolev, V. V.: Izv. Akad. Nauk SSSR, Neorg. Mater. 9 (1973) 1060; Inorg. Mater. (USSR) (English Transl.) 9 (1973) 947.

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    Trykozko, R. T.: Mater. Res. Bull. 10 (1975) 489. CrossRef

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    Rud’, Yu. V., Ovezov, K.: Fiz. Tekh. Poluprovodn. 10 (1976) 951; Sov. Phys. Semicond. (English Transl.) 10 (1976) 561.

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    Miller, A., MacKinnon, A., Weaire, D.: Beyond the Binaries — the chalcopyrite and related semiconductor compounds, in Solid State Physics. Academic Press, 1981.

About this content

Title
Zinc silicon arsenide (ZnSiAs2) interband and intraband transitions
Book Title
Ternary Compounds, Organic Semiconductors
Book DOI
10.1007/b72741
Chapter DOI
10.1007/10717201_427
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41E
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz
  • Cite this content

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