Landolt-Börnstein - Group III Condensed Matter

Zinc germanium arsenide (ZnGeAs2) energy gaps, intraband and interband transition energies

Abstract

This document is part of Subvolume E ‘Ternary Compounds, Organic Semiconductors’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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Title
Zinc germanium arsenide (ZnGeAs2) energy gaps, intraband and interband transition energies
Book Title
Ternary Compounds, Organic Semiconductors
Book DOI
10.1007/b72741
Chapter DOI
10.1007/10717201_445
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41E
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz
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