Landolt-Börnstein - Group III Condensed Matter

ZnO and (Zn,Cd)O quantum wells

Abstract

This chapter discusses the properties (band-gap energy, exciton binding energy, and lattice constant) of ZnO and (Zn,Cd)O quantum wells. Recent progress in the epitaxial growth of ZnO and (Cd,Zn)O has led to the growth of ZnO-related quantum-well structures. ZnO alloyed with Mn, Co, Ni, show the properties of diluted magnetic semiconductors, while this is not the case when Sc, Ti, V, or Cr is incorporated. The nature of band-gap near emission bands in ZnO quantum wells is typically attributed to be of excitonic nature. Low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) spectra from ZnO/Zn0.8Mg0.2O multiple quantum wells are shown. A theoretical treatment of the exciton transition energy and binding energy suggests that the interaction between electron and hole is polaron-like at large distances but approaches the dynamically screened Coulomb interaction as the separation is reduced. First and second order LO-phonon sidebands of both bound and localized excitons can be observed in photoluminescence. The exciton-LO phonon coupling is found to be reduced with respect to bulk ZnO in quantum wells where the exciton binding energy exceeds the LO-phonon energy. Biexcitons, excitonic gain and lasing, dynamics of optical excitations are discussed under the intermediate-density regime.

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Title
ZnO and (Zn,Cd)O quantum wells
Book Title
Optical Properties. Part 2
In
Quantum-well structures of II-VI compounds
Book DOI
10.1007/b98078
Chapter DOI
10.1007/10860224_17
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
34C2
Editors
  • C. Klingshirn Send Email (10)
  • Editor Affiliation
  • 10 Institut für Angewandte Physik, Universität Karlsruhe (TH), 76131, Karlsruhe, Gemany
  • Authors
  • H. Kalt Send Email (101)
  • Author Affiliation
  • 101 Institut für Angewandte Physik, Universität Karlsruhe (TH), 76131, Karlsruhe, Gemany
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