Landolt-Börnstein - Group III Condensed Matter

Electronic and Vibrational Properties · Figs. 102 - 128

Abstract

This chapter contains figures representing electronic structure of semiconductors, such as, GaSb(110), InAs(110), InP(110), InSb(110), CdTe(110), and ZnSe(110). Experimental evidence that a filled dangling bond state slightly overlaps a gap region has been recently provided by ARUPS measurements. Normal emission spectra of GaSb (110) are plotted as a function of photon energy. Photoemission and inverse photoemission spectra, theoretical PBBS and surface band structure of GaSb(110) are figured out. From careful contact potential measurements it has been concluded that the gap is free from intrinsic surface states. Theoretical surface band structure and PBBS, valence band EDC, and surface resonance of InAs(110), surface energy band dispersion and surface states of InP(110), theoretical surface band structure, valence band photoemission spectra, and surface resonance of InSb(110), surface band dispersion and electronic band structure of CdTe(110), surface band structure and PBBS of relaxed (110) surface, and initial state energy dispersion of ZnSe(110) are also illustrated.

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Title
Electronic and Vibrational Properties · Figs. 102 - 128
Book Title
Electronic and Vibrational Properties
In
3.2.2.3 (110) surfaces of partially ionic compounds: GaAs, GaP, GaSb, InAs, InP, InSb, CdTe, ZnSe
Book DOI
10.1007/b47750
Chapter DOI
10.1007/10086058_49
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24B
Editors
  • G. Chiarotti
  • Authors
  • C. Calandra
  • F. Manghi
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