Landolt-Börnstein - Group III Condensed Matter

8.1.1.3 Surface ellipsometry

Abstract

This chapter deals with surface ellipsometry which measures changes in the polarization parameters of light reflected from a surface. These parameters are: the relative phase Δ and the amplitude ratio tanΨ of the two components of linearly polarized light, parallel and perpendicular to the plane of incidence. When surface properties are studied by ellipsometry, a differential method has to be used, as in the case of Differential Reflectivity. Ellipsometric raw data for oxygen adsorption on Si(111)7·7 as a function of wavelength is illustrated. The surface optical constants and imaginary part of the surface dielectric function are also shown. Ellipsometry has been applied to derive the surface optical constants of a number of clean semiconductor surfaces, namely various crystallographic faces of Si and Ge as well as the cleavage faces of GaP, GaAs and ZnO.

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Title
8.1.1.3 Surface ellipsometry
Book Title
Interaction of Radiation with Surfaces and Electron Tunneling
In
8.1.1 Introduction
Book DOI
10.1007/b51875
Chapter DOI
10.1007/10119615_9
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24D
Editors
  • G. Chiarotti
  • Authors
  • P. Chiaradia
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