Landolt-Börnstein - Group III Condensed Matter

1.7.4.2 Defect saturation

Abstract

This chapter discusses saturation of defects produced in metals at high densities. During continuous irradiation at low temperatures, the immobile atomic defects will accumulate in the lattice and some of the newly formed defects will recombine or cluster with already existing ones. As a consequence, the defect structure will change and the damage rate will decrease. The damage rate will become zero at a saturation resistivity Δρs. This chapter presents data of maximum experimental resistivity changes Δρmax, saturation resistivities Δρs and recombination volumes v0. All v0 data have been reevaluated with “best” ρF values. A comparison of data from different particles shows an increase of v0 with increasing hardness of the recoil spectrum. The recombination volume decreases approximately reciprocally with increasing irradiation temperature.

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Title
1.7.4.2 Defect saturation
Book Title
Atomic Defects in Metals
In
1.7.4 Production of atomic defects in metals at high defect densities
Book DOI
10.1007/b37800
Chapter DOI
10.1007/10011948_16
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
25
Editors
  • H. Ullmaier
  • Authors
  • P. Jung
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