Landolt-Börnstein - Group III Condensed Matter

Atomic Defects in Metals · Ta

Abstract

This chapter discusses properties of Ta (tantalum). Ta belongs to the group VB transition metals known for a strong tendency to solve interstitial impurities as H, O, N, C. The impurity problem could be overcome to a large extent by electron-beam zone melting combined with ultra-high vacuum degassing and purification techniques. Properties of Frenkel defects (FD), self-interstitial atoms (SIA), and vacancy (V) in tantalum are listed. The SIA-SA interaction and V-SA interaction data are also tabulated. Resistivity recovery of electron-irradiated tantalum at 5.5 K and 8 K is illustrated. High-purity foil samples prepared from UHV-zone refined material are used for the experiments. Influence of niobium, tungsten and zirconium doping on isochronal recovery curve and differential curve are illustrated. Crystallographic effects on single crystals for different irradiation energies are plotted. Resistivity recovery of neutron-irradiated tantalum, high-purity and oxygen-doped specimens are illustrated. The influence of oxygen and/or nitrogen on the resistivity recovery of tantalum following plastic deformation at room temperature is illustrated.

Cite this page

References (62)

About this content

Title
Atomic Defects in Metals · Ta
Book Title
Atomic Defects in Metals
In
2.2.3 Data
Book DOI
10.1007/b37800
Chapter DOI
10.1007/10011948_52
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
25
Editors
  • H. Ullmaier
  • Authors
  • H. Schultz
  • Cite this content

    Citation copied