This chapter provides information on the annealing behaviour of defects in rhodium (Rh). In stage I, in spite of the rather low purity of the samples a prominent annealing peak is observed after thermal neutron irradiation that has been tentatively attributed to SIA migration. In the stage III, vacancy trapping at the PAC probe atom In has been observed at this temperature; as trapping at PAC probes generally yields a lower limit for TIII stage III might also be associated to the large annealing stage observed after plastic deformation around 600 K. A value for the activation energy of self-diffusion has been deduced from creep experiments. Isochronal annealing of the electrical resistivity and the differential recovery after low temperature thermal neutron irradiation is plotted. Isochronal annealing curve of resistivity change caused by cold work, measured at -196 ºC is shown.