Landolt-Börnstein - Group III Condensed Matter

GaN, hexagonal modification: exciton energies, pressure dependence

Abstract

This document is part of Volume 44 ‘Semiconductors’, Subvolume A ‘New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds’ of Landolt-Börnstein Group III ‘Condensed Matter’. It contains data on GaN (gallium nitride), Element System Ga-N.

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Title
GaN, hexagonal modification: exciton energies, pressure dependence
Book Title
New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds
In
Data extract from Landolt-Börnstein III/44A: Semiconductors – New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds
Book DOI
10.1007/978-3-540-48529-2
Chapter DOI
10.1007/978-3-540-48529-2_112
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
44A
Editors
  • U. Roessler Send Email (10)
  • Editor Affiliation
  • 10 Institut für Theoretische Physik, Universitaet Regensburg, 93040, Regensburg, Germany
  • Authors
  • B.K. Meyer Send Email (6_112)
  • Author Affiliation
  • 6_112 1. Physikalisches Institut, Justus Liebig Universitaet Giessen, Heinrich-Buff-Ring 16, 35392, Giessen, Germany
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