Landolt-Börnstein - Group III Condensed Matter

10.1 Quantized conductance

Abstract

This chapter discusses literature view on quantized conductance and finite temperature of connected rings. Wires and rings have been fabricated from poly-crystalline Si by electron beam lithography (EBL) and dry etching and quantized conductance was observed. Regularly spaced conductance steps in GaAs rings have been observed. Conductance steps have been observed at ≈ 1K in an array of four parallel rings made of a Si/SiGe heterostructure. Finite temperature leads to energy evaraging of AB interference patterns. The h/2e oscillations due to time reversed paths do not decrease in amplitude when averaged over energy range κBT. Further, the phase coherence length decreases with increasing temperature and when lφ becomes smaller than L, the AB interference patterns and the weak-localization oscillations decay exponentially with temperature due to dephasing. The temperature dependence of the phase coherence length in a device fabricated by EBL and reactive ion etching (RIE) on modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE) has been shown.

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Title
10.1 Quantized conductance
Book Title
Electronic Transport. Part 1: Quantum Point Contacts and Quantum Wires
In
10 Connected rings
Book DOI
10.1007/b55682
Chapter DOI
10.1007/10479560_59
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
34B1
Editors
  • B. Kramer
  • Authors
  • A. Fechner
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