Landolt-Börnstein - Group III Condensed Matter

10.10 Indium oxide rings

Abstract

This chapter discusses dispersion relation and indium oxide rings. The two-terminal conductance measurements were performed at temperatures down to 40mK in magnetic fields up to 12 T. In the magnetoresistance (MR) spectrum of the indium oxide rings, two sets of h/e AB oscillations, almost equal in magnitude and shifted by π with respect to each other, were observed. The resistance changes of the amplitude of the new and the background h/e peaks versus gate voltage was given. The turn-on voltages for the modes were determined from conductance-gate voltage curve. The application of a magnetic field affected the dc current-voltage characteristics of the indium oxide wires, where a wire has been examined at 102 mK for four different magnetic fields.

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Title
10.10 Indium oxide rings
Book Title
Electronic Transport. Part 1: Quantum Point Contacts and Quantum Wires
In
10 Connected rings
Book DOI
10.1007/b55682
Chapter DOI
10.1007/10479560_67
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
34B1
Editors
  • B. Kramer
  • Authors
  • A. Fechner
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