Landolt-Börnstein - Group III Condensed Matter

HgS: band structure, energy gaps

Abstract

This document is part of Subvolume C ‘New Data and Updates for III-V, II-VI, I-VII Compounds’ of Volume 44 ‘Semiconductors’ of Landolt-Börnstein - Group III ‘Condensed Matter’.

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Title
HgS: band structure, energy gaps
Book Title
New Data and Updates for III-V, II-VI and I-VII Compounds
In
Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds
Book DOI
10.1007/978-3-540-92140-0
Chapter DOI
10.1007/978-3-540-92140-0_287
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
44C
Editors
  • U. Rössler Send Email (10)
  • Editor Affiliation
  • 10 Institut für Theoretische Physik, Universität Regensburg, Universitätsstraße 31, 93053, Regensburg, Germany
  • Authors
  • J. Chu Send Email (100_287)
  • Author Affiliation
  • 100_287 Shanghai Institute of Technical Physics, CAS National Laboratory for Infrared Physics, 200083, Shanghai, China
  • Cite this content

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