@Misc{LandoltBornstein2003:sm_lbs_978-3-540-31358-8_97,
editor="Madelung, O.
and R{\"o}ssler, U.
and Schulz, M.",
title="gallium arsenide (GaAs), electron traps (directly measured carrier cross sections): Datasheet from Landolt-B{\"o}rnstein - Group III Condensed Matter {\textperiodcentered} Volume 41A2$\beta$: ``Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.'' in SpringerMaterials (https://doi.org/10.1007/10860305{\_}97)",
publisher="Springer-Verlag Berlin Heidelberg",
note="Copyright 2003 Springer-Verlag Berlin Heidelberg",
note="Part of SpringerMaterials",
note="accessed 2021-04-17",
doi="10.1007/10860305_97",
url="https://materials.springer.com/lb/docs/sm_lbs_978-3-540-31358-8_97"
}