TY - COMP ED - Madelung, O. ED - Rössler, U. ED - Schulz, M. TI - gallium arsenide (GaAs), electron traps (directly measured carrier cross sections): Datasheet from Landolt-Börnstein - Group III Condensed Matter · Volume 41A2β: "Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds." in SpringerMaterials (https://doi.org/10.1007/10860305_97) PB - Springer-Verlag Berlin Heidelberg UR - https://materials.springer.com/lb/docs/sm_lbs_978-3-540-31358-8_97 DO - 10.1007/10860305_97 N1 - Copyright 2003 Springer-Verlag Berlin Heidelberg ID - LandoltBornstein2003:sm_lbs_978-3-540-31358-8_97 ER -