Ba8Ga10Si36 (Ba4Ga8Si15) Crystal Structure
General Information
- Phase Label(s): Ba4Ga8Si15
- Structure Class(es): –
- Classification by Properties: metal, semiconductor, superconductor
- Mineral Name(s): –
- Pearson Symbol: cP54
- Space Group: 223
- Phase Prototype: Ba4Al3(Al0.25Ge0.75)20
- Measurement Detail(s): automatic diffractometer (determination of cell and structural parameters), X-rays, Cu Kα (determination of cell and structural parameters)
- Phase Class(es): –
- Compound Class(es): silicide
- Interpretation Detail(s): complete structure determined, Rietveld refinement, RP = 0.0832; wRP = 0.1114
- Sample Detail(s): sample prepared from Ba, Ga, Si, electron microprobe analysis; nominal composition Ba7.8Ga10Si34, powder (determination of cell and structural parameters)
Substance Summary
- Standard Formula: Ba4Ga5Si18
- Alphabetic Formula: Ba4Ga5Si18
- Published Formula: Ba8Ga10Si36
- Refined Formula: Ba3.98Ga5Si17
- Wyckoff Sequence: 223,kidca
- Z Formula Units: 2
- Density: ρ = 4.06 Mg·m−3
Crystallographic Data
Cell Parameters
Atom Coordinates
Standardized
Published
Displacement Parameters
Isotropic
Experimental Details
Reference
3D Interactive Structure
About this content
PAULING FILE Multinaries Edition – 2012
sd_1120487
©Springer & Material Phases Data System (MPDS), Switzerland & National Institute for Materials Science (NIMS), Japan, 2016
Pierre Villars, Material Phases Data System (MPDS), CH-6354 Vitznau, Switzerland
SpringerMaterials Release 2016.
Data generated pre-2002: © Springer & MPDS & NIMS; post-2001: © Springer & MPDS
All Rights Reserved. Version 2016.10.
Project Coordinator: Shuichi Iwata
Section-Editor: Karin Cenzual (Crystal Structures)
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