CuSi2P3 (Cu0.335Si0.645P) Crystal Structure
General Information
- Phase Label(s): Cu0.335Si0.645P
- Structure Class(es): –
- Classification by Properties: semiconductor, thermoelectric
- Mineral Name(s): –
- Pearson Symbol: tI4
- Space Group: 119
- Phase Prototype: (Ag0.36Ga0.64)0.88Te
- Measurement Detail(s): automatic diffractometer (determination of cell parameters), automatic diffractometer; Canada, Ontario, Chalk River Laboratories, NRU reactor, DUALSPEC C2 (determination of structural parameters), neutrons; λ = 0.133037 nm (determination of cell and structural parameters)
- Phase Class(es): –
- Compound Class(es): phosphide
- Interpretation Detail(s): complete structure determined, Rietveld refinement, multiphase, RP = 0.029; wRP = 0.038; RB = 0.012
- Sample Detail(s): sample prepared from Cu, Si, P, electron microprobe analysis; Cu1.002(7)Si2.07(2)P2.93(2); amounts of Si and Cu3P (2.08(4) and 0.19(2) wt.%), powder (determination of cell and structural parameters)
Substance Summary
- Standard Formula: Cu0.33Si0.67P
- Alphabetic Formula: Cu0.33PSi0.67
- Published Formula: CuSi2P3
- Refined Formula: Cu0.34PSi0.66
- Wyckoff Sequence: 119,ca
- Z Formula Units: 2
- Density: ρ = 3.28 Mg·m−3
Crystallographic Data
Cell Parameters
Atom Coordinates
Standardized
Published
Displacement Parameters
Isotropic
Experimental Details
Reference
3D Interactive Structure
About this content
PAULING FILE Multinaries Edition – 2012
sd_1125996
©Springer & Material Phases Data System (MPDS), Switzerland & National Institute for Materials Science (NIMS), Japan, 2016
Pierre Villars, Material Phases Data System (MPDS), CH-6354 Vitznau, Switzerland
SpringerMaterials Release 2016.
Data generated pre-2002: © Springer & MPDS & NIMS; post-2001: © Springer & MPDS
All Rights Reserved. Version 2016.10.
Project Coordinator: Shuichi Iwata
Section-Editor: Karin Cenzual (Crystal Structures)
Cite this content