GaAs (T = 200 K) Crystal Structure
General Information
- Phase Label(s): GaAs rt
- Structure Class(es): ZnS-SiC polytype, normal adamantane structure
- Classification by Properties: Pauli paramagnet, metal, semiconductor
- Mineral Name(s): –
- Pearson Symbol: cF8
- Space Group: 216
- Phase Prototype: ZnS
- Measurement Detail(s): automatic diffractometer (determination of cell parameters), automatic diffractometer; Rigaku AFC5 (determination of structural parameters), X-rays, Mo Kα (determination of cell and structural parameters), T = 200 K (determination of cell and structural parameters)
- Phase Class(es): –
- Compound Class(es): arsenide
- Interpretation Detail(s): complete structure determined; temperature dependence studied, least-squares refinement; F > 3σ(F), wR = 0.0145
- Sample Detail(s): sample prepared from GaAs, single crystal (determination of cell parameters), single crystal, 0.220(4) mm diameter (determination of structural parameters)
Substance Summary
- Standard Formula: GaAs
- Alphabetic Formula: AsGa
- Published Formula: GaAs
- Refined Formula: AsGa
- Wyckoff Sequence: 216,ca
- Z Formula Units: 4
- Density: ρ = 5.34 Mg·m−3
Crystallographic Data
Cell Parameters
Atom Coordinates
Standardized
Published
Displacement Parameters
Isotropic
Experimental Details
Reference
3D Interactive Structure
About this content
PAULING FILE Multinaries Edition – 2012
sd_1231700
©Springer & Material Phases Data System (MPDS), Switzerland & National Institute for Materials Science (NIMS), Japan, 2016
Pierre Villars, Material Phases Data System (MPDS), CH-6354 Vitznau, Switzerland
SpringerMaterials Release 2016.
Data generated pre-2002: © Springer & MPDS & NIMS; post-2001: © Springer & MPDS
All Rights Reserved. Version 2016.10.
Project Coordinator: Shuichi Iwata
Section-Editor: Karin Cenzual (Crystal Structures)
Cite this content