(Ga0.40In0.60)2Se3 (GaInSe3) Crystal Structure
General Information
- Phase Label(s): GaInSe3
- Structure Class(es): –
- Classification by Properties: semiconductor
- Mineral Name(s): –
- Pearson Symbol: hP30
- Space Group: 169
- Phase Prototype: AlInS3
- Measurement Detail(s): automatic diffractometer (determination of cell and structural parameters), X-rays, Cu Kα (determination of cell and structural parameters)
- Phase Class(es): –
- Compound Class(es): selenide
- Interpretation Detail(s): complete structure determined, Rietveld refinement, RP = 0.0795; wRP = 0.1048
- Sample Detail(s): sample prepared from Ga2Se3, In2Se3, powder (determination of cell and structural parameters)
Substance Summary
- Standard Formula: Ga0.8In1.2Se3
- Alphabetic Formula: Ga0.8In1.2Se3
- Published Formula: (Ga0.40In0.60)2Se3
- Refined Formula: Ga0.80In1.20Se3
- Wyckoff Sequence: 169,a5
- Z Formula Units: 6
- Density: ρ = 5.34 Mg·m−3
Crystallographic Data
Cell Parameters
Atom Coordinates
Standardized
Published
Displacement Parameters
Isotropic
Experimental Details
Reference
3D Interactive Structure
About this content
PAULING FILE Multinaries Edition – 2012
sd_1521644
©Springer & Material Phases Data System (MPDS), Switzerland & National Institute for Materials Science (NIMS), Japan, 2016
Pierre Villars, Material Phases Data System (MPDS), CH-6354 Vitznau, Switzerland
SpringerMaterials Release 2016.
Data generated pre-2002: © Springer & MPDS & NIMS; post-2001: © Springer & MPDS
All Rights Reserved. Version 2016.10.
Project Coordinator: Shuichi Iwata
Section-Editor: Karin Cenzual (Crystal Structures)
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