Al0.74Ga0.26N (Al0.5Ga0.5N hex) Crystal Structure
General Information
- Phase Label(s): Al0.5Ga0.5N hex
- Structure Class(es): normal adamantane structure
- Classification by Properties: semiconductor
- Mineral Name(s): –
- Pearson Symbol: hP4
- Space Group: 186
- Phase Prototype: ZnO
- Measurement Detail(s): automatic diffractometer (determination of cell parameters), automatic diffractometer; Oxford Diffraction Xcalibur (determination of structural parameters), X-rays, Mo Kα; λ = 0.071073 nm (determination of cell and structural parameters), T = 295 K (determination of cell and structural parameters)
- Phase Class(es): –
- Compound Class(es): nitride
- Interpretation Detail(s): complete structure determined; composition dependence studied, full-matrix least-squares refinement; 9 variables; 81 reflections; I > 2σ(I), R = 0.0234; wR = 0.0577
- Sample Detail(s): sample prepared from AlyGa1−yN or AlN, inductive coupled plasma method; Al0.74Ga0.26N, single crystal (determination of cell parameters), single crystal, 0.8×0.8×0.8 mm3 (determination of structural parameters)
Substance Summary
- Standard Formula: Al0.74Ga0.26N
- Alphabetic Formula: Al0.74Ga0.26N
- Published Formula: Al0.74Ga0.26N
- Refined Formula: Al0.72Ga0.28N
- Wyckoff Sequence: 186,b2
- Z Formula Units: 2
- Density: ρ = 4.06 Mg·m−3
Crystallographic Data
Cell Parameters
Atom Coordinates
Standardized
Published
Experimental Details
Reference
3D Interactive Structure
About this content
PAULING FILE Multinaries Edition – 2012
sd_1631431
©Springer & Material Phases Data System (MPDS), Switzerland & National Institute for Materials Science (NIMS), Japan, 2016
Pierre Villars, Material Phases Data System (MPDS), CH-6354 Vitznau, Switzerland
SpringerMaterials Release 2016.
Data generated pre-2002: © Springer & MPDS & NIMS; post-2001: © Springer & MPDS
All Rights Reserved. Version 2016.10.
Project Coordinator: Shuichi Iwata
Section-Editor: Karin Cenzual (Crystal Structures)
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