Landolt-Börnstein - Group III Condensed Matter

Silicon, excited bound states of very shallow centers and deep transition metal defects

Abstract

This document is part of Subvolume A2a ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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Title
Silicon, excited bound states of very shallow centers and deep transition metal defects
Book Title
Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements
Book DOI
10.1007/b71128
Chapter DOI
10.1007/10681604_87
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41A2α
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz
  • Cite this content

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