Landolt-Börnstein - Group III Condensed Matter
gallium phosphide (GaP), defect levels associated with transition metal impurities: energy levels
Abstract
This document is part of Subvolume A2b ‘Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.
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About this content
- Title
- gallium phosphide (GaP), defect levels associated with transition metal impurities: energy levels
- Book Title
- Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.
- Book DOI
- 10.1007/b83098
- Chapter DOI
- 10.1007/10860305_61
- Part of
- Landolt-Börnstein - Group III Condensed Matter
- Volume
- 41A2β
- Editors
-
- O. Madelung
- U. Rössler
- M. Schulz
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