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Landolt-Börnstein - Group III Condensed Matter

Gallium telluride (GaTe) interband transition energies

Abstract

This document is part of Subvolume C ‘Non-Tetrahedrally Bonded Elements and Binary Compounds I’ of Volume 41 ‘Semiconductors’ of Landolt-Börnstein - Group III Condensed Matter.

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References (3)

About this content

Title
Gallium telluride (GaTe) interband transition energies
Book Title
Non-Tetrahedrally Bonded Elements and Binary Compounds I
Book DOI
10.1007/b71138
Chapter DOI
10.1007/10681727_476
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
41C
Editors
  • O. Madelung
  • U. Rössler
  • M. Schulz
  • Cite this content

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