Landolt-Börnstein - Group III Condensed Matter

Zincblende sulphide/selenide type-II quantum wells

Abstract

This chapter reviews the properties of sulphide/selenide type-II quantum wells (QWs) in the zincblende phase. The properties discussed include band-gap energy, lattice constant and valence-band offset. The photoluminescence (PL) from CdS/ZnSe shows a linear polarization degree of up to 20% resulting from the bond direction at the interfaces which contain no common anion or cation. PL from localized excitons in CdS/ZnSe multiple quantum wells shows a non-monotonic (S-like) shift of the PL maximum due to acoustic-phonon-assisted exciton multi-hopping processes. The exciton emission peaks in CdSe/CdS and CdS/ZnSe type-II structures show a significant blue shift with logarithmic dependence on increasing excitation intensity. This is a result of the space charge buildup due to carrier separation. Experimental (squares) and theoretical transition energies of CdS/ZnSe quantum wells versus well width is illustrated in this chapter. Filling of the quantum-wells states up to the second excited state is observed in highly excited CdS/ZnSe quantum wells. The photoluminescence decay times are a sensitive function of the electron-hole wavefunction overlap. The latter depends on the thickness of the CdS layer.

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Title
Zincblende sulphide/selenide type-II quantum wells
Book Title
Optical Properties. Part 2
In
Quantum-well structures of II-VI compounds
Book DOI
10.1007/b98078
Chapter DOI
10.1007/10860224_14
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
34C2
Editors
  • C. Klingshirn Send Email (10)
  • Editor Affiliation
  • 10 Institut für Angewandte Physik, Universität Karlsruhe (TH), 76131, Karlsruhe, Gemany
  • Authors
  • H. Kalt Send Email (101)
  • Author Affiliation
  • 101 Institut für Angewandte Physik, Universität Karlsruhe (TH), 76131, Karlsruhe, Gemany
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