Landolt-Börnstein - Group III Condensed Matter

Structure · Tables 11 - 18

Abstract

This chapter compiles data for the reconstructed surfaces of semiconductors and insulators. Data for the (100), (110) and (111) surfaces of diamond and (100), (110) and (111) surfaces of Si are listed. Some of the reported structures are believed to be impurity-stabilized as remarked in the last column of the table. Data for the (100), (110) and (111) surfaces of Ge are also tabulated. The observed structures of Ge(100) surface are similar to those of Si(100). Data for high-Miller-index surfaces of Si (112), Si (113), Si (115), Ge (113), and Ge (115) are also listed. Surfaces, LEED, techniques, preparation methods, model and remarks are listed in the tables. The techniques include LEED, ESD-TOF, ARUPS, MEIS-CB, IPE, He diffraction, RHEED, LEIS, STM, EELS, XPS, TEM, TED, ICISS, X-ray diffraction, LEERM and PES. The preparation methods include polishing, annealing, IBA, MBE, cleaving, slow cooling and chemical cleaning.

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Title
Structure · Tables 11 - 18
Book Title
Structure
In
2.2.2.2 Semiconductors and insulators
Book DOI
10.1007/b41604
Chapter DOI
10.1007/10031427_32
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24A
Editors
  • G. Chiarotti
  • Authors
  • A. Fasolino
  • A. Selloni
  • A. Shkrebtii
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