Landolt-Börnstein - Group III Condensed Matter

Figs. 232 - 252, Table 55


This chapter discusses the electronic structure of group IIIA: aluminum (Al), indium (In). This chapter illustrates i) double-layer total valence charge density in the (110) bulk Al plane, ii) self-consistent pseudopotential calculation of projected band structure of Al together with surface bands, iii) dispersion of Al surface state and image induced surface resonance, iv) surface density of states calculated at the adjustable image plane for Al, v) real lines of the complex band structure of Al, vi) photoelectron spectra at various photon energies for Al, vii) energy width of the surface state on Al, viii) energy dispersion of loss structures on Al, xi) real part of surface plasmon frequency versus surface-parallel wavenumber in Al, x) potential profile of a semi-infinite crystal (z < 0) subject to image potential and xi) theoretical scattering probability (curves 1 and 2), compared with the experimental reflection electron energy loss spectrum from the Al surface. Self-consistent pseudopotential calculation of the electronic structure of In(001) surface is shown.

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Figs. 232 - 252, Table 55
Book Title
Electronic and Vibrational Properties
In Group IIIA: Al, In
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Landolt-Börnstein - Group III Condensed Matter
  • G. Chiarotti
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  • K. Jakobi
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