Landolt-Börnstein - Group III Condensed Matter

Figs. 232 - 252, Table 55

Abstract

This chapter discusses the electronic structure of group IIIA: aluminum (Al), indium (In). This chapter illustrates i) double-layer total valence charge density in the (110) bulk Al plane, ii) self-consistent pseudopotential calculation of projected band structure of Al together with surface bands, iii) dispersion of Al surface state and image induced surface resonance, iv) surface density of states calculated at the adjustable image plane for Al, v) real lines of the complex band structure of Al, vi) photoelectron spectra at various photon energies for Al, vii) energy width of the surface state on Al, viii) energy dispersion of loss structures on Al, xi) real part of surface plasmon frequency versus surface-parallel wavenumber in Al, x) potential profile of a semi-infinite crystal (z < 0) subject to image potential and xi) theoretical scattering probability (curves 1 and 2), compared with the experimental reflection electron energy loss spectrum from the Al surface. Self-consistent pseudopotential calculation of the electronic structure of In(001) surface is shown.

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Title
Figs. 232 - 252, Table 55
Book Title
Electronic and Vibrational Properties
In
3.1.2.10 Group IIIA: Al, In
Book DOI
10.1007/b47750
Chapter DOI
10.1007/10086058_29
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24B
Editors
  • G. Chiarotti
  • Authors
  • K. Jakobi
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