Landolt-Börnstein - Group III Condensed Matter

Electronic and Vibrational Properties · Figs. 9 - 41


This chapter discusses arrangement of the data and surfaces of covalent semiconductors. The data are arranged according to the specific element or compound. The presentation is limited to semiconductors having diamond or zinc-blende structure. The convention of referring the energies to the valence band maximum (VBM) is always adopted in the presentation of theoretical results. Surfaces of covalent semiconductors: carbon (C), silicon (Si), germanium (Ge) are described. The surface obtained by cleaving and mechanical polishing produces a 1 x 1 LEED pattern and is hydrogen terminated. Surface band structure and PBBS for the diamond C(111) ideal surface, photoemission spectra from the diamond surface at different photon energies, comparison between angle integrated and normal emission UPS spectra at hν = 50 eV and polarization dependence of the UPS hν = 37 eV of C are shown. Electronic structure of the ideal Si(001), angle integrated photoemission spectra, surface band structure and PBBS as obtained by a self-consistent pseudopotential calculation, comparison of measured normal emission ARUPS and KRIPS data with the calculated layer DOS of Si(001)2 x 1 are figured out. The surface band structure for the ideal Si(111) surface as obtained by a pseudo-potential slab calculation, angle integrated photoemission spectra at hν = 21.0 eV of Si(111)1 x 1, dispersion of the experimentally observed surface state bands and theoretical surface band structure, comparison between experimental data for surface state dispersion obtained by angle resolved photoemission and theoretical calculations, angle resolved two photon photoemission spectra at hν = 10.5 eV of Si(111)2 x 1 are shown.

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Electronic and Vibrational Properties · Figs. 9 - 41
Book Title
Electronic and Vibrational Properties
In Surfaces of covalent semiconductors: C, Si, Ge
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Landolt-Börnstein - Group III Condensed Matter
  • G. Chiarotti
  • Authors
  • C. Calandra
  • F. Manghi
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