Landolt-Börnstein - Group III Condensed Matter

3.2.2.4 GaAs polar surfaces

Abstract

This chapter illustrates surface properties of GaAs polar surfaces. The As-rich surface shows a 2 x 4 reconstruction, which seems to arise from dimerization of surface atoms with every fourth dimer missing and an As-coverage of 0.75 monolayers on top of a full bulk-like Ga layer. Top view of the 1 x 1, 2 x 1, and c(4 x 4) surface Brillouin zones of GaAs, PBBS and surface band structure for the ideal As terminated GaAs(001) surface back-folded onto a 2 x 1 surface Brillouin zone are shown. Surface band structure and PBBS for the GaAs(001)2 x 1 surface, theoretical LDOS for GaAs(001) 2 x 1 surfaces, dispersion of the surface bands for GaAs(0012) x 4 phase, energy band dispersion of a surface state of GaAs(0012) x 4 structure and dispersion of surface states along the [011] directions of the GaAs(001)c(4 x 4) surface are shown. The 2 x 2 reconstruction displayed by the (111) surface is As-rich and has been explained in terms of the so called “vacancy-buckling model”, which consists in creating an equal density of Ga and As. Surface energy bands for the GaAs(111)-Ga 1 x 1 surface with three different geometries, comparison between the angle integrated valence band photoemission spectra at hv = 60 eV, comparison between the photoemission valence band spectra at hv = 130 eV and energy band dispersion of surface related features from the photoemission spectra for GaAs(111)-Ga terminated 2 x 2 are figured out.

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Title
3.2.2.4 GaAs polar surfaces
Book Title
Electronic and Vibrational Properties
In
3.2.2 Data
Book DOI
10.1007/b47750
Chapter DOI
10.1007/10086058_50
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24B
Editors
  • G. Chiarotti
  • Authors
  • C. Calandra
  • F. Manghi
  • Cite this content

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