Landolt-Börnstein - Group III Condensed Matter

6.2.2.2.1 III-V semiconductors

Abstract

This chapter discusses characteristic features of semiconductor surfaces observed with electron energy loss spectrum (EELS). The characteristic features are dipole active surface phonons, interband transitions and surface plasmons or the presence of a quasielastic broadening of the elastically reflected beams. Most EELS studies on III-V semiconductor surfaces were performed on the (110) face which may be produced in vacuum by cleavage. The surface anisotropy of the reconstructed (110) surfaces is reflected in the anisotropic electron energy loss (EEL)-cross section of the electronic transition observed on all compound semiconductor surfaces. EEL-spectra of Si-doped n-GaAs(001) taken at Ei from 5-30 eV showing the Fuchs-Kliever surface phonon and the plasmon associated with the free carriers is given. Width of the quasielastic peak as a function of crystal temperature for n-GaAs(100), and the temperature dependence of the band gap and of the Fermi-level position for GaAs(001) crystal are illustrated. Illustrations also include intensity of plasmon loss, coupling of the surface plasmon and Fuchs-Kliever mode for n-GaAs, and dispersion of the surface plasmon and surface phonon losses for heavily n-doped n-GaAs. Surface interband transition on GaP(110) and InP(110) for scattering along the crystallographic direction, and dispersion of the mixed surface plasmon and phonon modes vs. effective carrier concentration on InSb(110) are also presented.

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Title
6.2.2.2.1 III-V semiconductors
Book Title
Interaction of Charged Particles and Atoms with Surfaces
In
6.2.2.2 Semiconductors
Book DOI
10.1007/b87125
Chapter DOI
10.1007/10086066_35
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24C
Editors
  • G. Chiarotti
  • Authors
  • M. Rocca
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