Landolt-Börnstein - Group III Condensed Matter

6.2.2.2.2 Si and Ge

Abstract

This chapter provides information on Si( 111) and Ge( 111) reconstructed surfaces studied by electron energy loss spectrum (EELS). The width of the quasielastic peak is considerable in the case of Ge(111)2 x 1 at room temperature. Electron energy loss (EEL)-spectra showing the interband transition between dangling-bond surface states on intrinsic Ge(111)2 x 1 is illustrated. The dispersion of the interband transition was measured by varying the impact energy and moving off-specular for silicon (Si) and for germanium (Ge). EEL-spectra of the dipole active surface phonon on Si(111)2 x 1 are plotted. Dependence of the scattering efficiency of the dipole active surface phonon on Si(111)2 x 1 on the azimuthal direction is illustrated. Loss probability for the 56 meV surface phonon on Si(111)2 x 1 is presented. The onset of the electronic transition shifts with temperature by 90 meV and 125 meV for Si and Ge. EEL-spectra recorded on boron-doped Si(111)7 x 7 are plotted. EELS measurements show a strong broadening of the specular peak, whose intrinsic nature is demonstrated by its quenching after adsorption of hydrogen or by traces of impurities (C or Ni). The presence of dipole active surface phonons was confirmed on Si(111)7 x 7 surfaces for which the quasi-elastic background is lifted by traces of impurities. Temperature dependence of the quasi elastic peak line width FWHM, the depletion layer width and resistivity of the Si(111)7 x 7 surface are illustrated.

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Title
6.2.2.2.2 Si and Ge
Book Title
Interaction of Charged Particles and Atoms with Surfaces
In
6.2.2.2 Semiconductors
Book DOI
10.1007/b87125
Chapter DOI
10.1007/10086066_36
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
24C
Editors
  • G. Chiarotti
  • Authors
  • M. Rocca
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