Landolt-Börnstein - Group III Condensed Matter

3.2.3 Implantation


This chapter discusses direct implantation of α-particles or He3 ions, which is an effective means of introducing helium into solids and is increasingly employed mainly in basic investigations of helium effects. At very low injection energies E<Ed, the introduction of helium is "gentle", i.e. occurs without simultaneous production of displacement damage. Numerical values for threshold energy Ed and the pertinent projected ranges for a number of metals are tabulated. The threshold energy for creating displacement damage during the implantation of He3 and He4, respectively, into metals such as Al, V, Fe, Ni, Nb, Mo, Pd, Ag, Ta, W, Pt, Au are tabulated. Subthreshold or "gentle" helium implantation is necessary for studying the behaviour of helium atoms on interstitial positions in metal lattices. Such investigations are sometimes rendered difficult by the shallow depths where the helium is deposited.

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3.2.3 Implantation
Book Title
Atomic Defects in Metals
3.2 Production processes and rates
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Landolt-Börnstein - Group III Condensed Matter
  • H. Ullmaier
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  • H. Ullmaier
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