Landolt-Börnstein - Group III Condensed Matter

Atomic Defects in Metals · Sc

Abstract

This chapter discusses isochronal annealing of the electrical resistivity of scandium (Sc) after e--irradiation and vacancy formation energy of the low temperature α-phase of thallium (Tl). The Frenkel-pair resistivity of Sc has been determined from damage rate measurements. The prominent low temperature annealing stage I has been attributed to SIA migration; no dose dependent stage IE has been observed, probably due to the low purity of the samples. The stage III is tentatively attributed to vacancy migration; there is complete annealing after low dose e--irradiation. The vacancy formation energy of the low temperature α-phase of Tl has been determined by PAS. A first experiment using the Doppler broadening technique yields a value of H1 F V = 0.52 eV and later investigations by lifetime measurements yielded values of H1 F V = 0.46 eV and using a three-state trapping model a value of H1 F V = 0.39 eV.

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Title
Atomic Defects in Metals · Sc
Book Title
Atomic Defects in Metals
In
2.4.2 Data
Book DOI
10.1007/b37800
Chapter DOI
10.1007/10011948_75
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
25
Editors
  • H. Ullmaier
  • Authors
  • P. Ehrhart
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