This chapter discusses the defect annealing of indium (In). The isochronal annealing of the electrical resistivity and differential recovery of indium after low temperature thermal neutron irradiation is figured out. The isochronal recovery of indium after various cold works like plastic deformation, tensile deformation, torsional deformation and compressional deformation has been investigated. In stage I, although there is no dose dependence observed this stage has been tentatively attributed to SIA migration. Stage III leads to nearly complete annealing after thermal neutron irradiation and is observed also after plastic deformation. As the peak temperature is in responsible agreement with activation energy of (0.27-0.36eV) this stage is tentatively attributed to vacancy migration. The properties of Frenkel defects (FD) and vacancies (V) in indium by electrical resistivity and PAS method are tabulated.