Landolt-Börnstein - Group III Condensed Matter

3 Diffusion in compound semiconductors - Figures

Abstract

This chapter presents graphical representation of diffusion in compound semiconductors. GaAs and GaSb self diffusion coefficients versus inverse temperature are shown. Diffusion coefficient of Si, S, Zn, Ag, Cr in GaAs as a function of ambient pressure, at various temperatures as derived from Boltzmann-Matano analysis and Zn concentration profiles measured by EMP and by SIMS after diffusion at T = 973 K into undoped InP are figured out. Radiotracer self-diffusion coefficient D of Zn, Se, Cd in Zn-saturated and Se-saturated ZnSe, Cd-saturated CdTe versus inverse temperature and partial vapour pressure are illustrated.

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Title
3 Diffusion in compound semiconductors - Figures
Book Title
Diffusion in Semiconductors
Book DOI
10.1007/b53031
Chapter DOI
10.1007/10426818_11
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
33A
Editors
  • D. L. Beke
  • Authors
  • M. B. Dutt
  • B. L. Sharma
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