!
Your connection is not secure.

From 31st May you may not be able to access Springer Nature websites. This could be because you are using an older browser or an unsupported proxy. Please update your browser or speak to your IT department.

!
Your connection is not secure.

From 31st May you may not be able to access Springer Nature websites. This could be because you are using an older browser or an unsupported proxy. Please update your browser or speak to your IT department.

Landolt-Börnstein - Group III Condensed Matter

7.1 General properties

Abstract

This chapter discusses the general property of IV-VI semiconductor materials. The binaries PbS, PbTe, and PbSe (ordered by their band gap equivalent wavelengths), and typical mixed crystals of this material family like the ternaries PbSnTe, PbSnSe, PbCdSe, PbSSe cover a band gap range from some 50meV to 500meV, with a corresponding wavelength range of roughly 3μm to 30μm. The chapter overviews the relation of the band gap of some mixed crystals on the lattice periodicity length. The band structure and constant energy surfaces of PbTe are shown. Band gap energy versus lattice constant for IV-VI materials and band offsets for conduction and valence bands at PbEuSe/PbSe interfaces are illustrated. The theoretical density of states of a [111] grown PbEuTe/PbTe superlattice in comparison to the bulk material density of states (DOS) is shown. The comparison of the spectra of the absorption coefficient and of the refractive index of a PbEuTe/PbTe multi-quantum well has been shown.

Cite this page

References (40)

About this content

Title
7.1 General properties
Book Title
Optical Properties. Part 1
In
7 IV-VI Semiconductors
Book DOI
10.1007/b55683
Chapter DOI
10.1007/10479578_40
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
34C1
Editors
  • C. Klingshirn
  • Authors
  • M. Tacke
  • A. Ishida
  • Cite this content

    Citation copied