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Landolt-Börnstein - Group III Condensed Matter

ZnS: ionization energies (impurities and defects)

Abstract

This document is part of Volume 44 ‘Semiconductors’, Subvolume B ‘New Data and Updates for II-VI Compounds’ of Landolt-Börnstein Group III ‘Condensed Matter’. It contains data on ZnS (zinc sulphide), Element System S-Zn.

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Title
ZnS: ionization energies (impurities and defects)
Book Title
Semiconductors
In
Data extract from Landolt-Börnstein III/44B: Semiconductors – New Data and Updates for II-VI Compounds
Book DOI
10.1007/978-3-540-74392-7
Chapter DOI
10.1007/978-3-540-74392-7_172
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
44B
Editors
  • U. Roessler Send Email (10)
    • Editor Affiliation
  • 10 Institut für Theoretische Physik, Universitaet Regensburg, 93040, Regensburg, Germany
    • Authors
  • J. Gutowski Send Email (5_172)
  • K. Sebald Send Email (6_172)
  • T. Voss Send Email (7_172)
    • Author Affiliation
  • 5_172 University of Bremen, Institute of Solid State Physics - Semiconductor Optics, Otto-Hahn-Allee, 28359, Bremen, Germany
  • 6_172 University of Bremen, Institute of Solid State Physics - Semiconductor Optics, Otto-Hahn-Allee, 28359, Bremen, Germany
  • 7_172 University of Bremen, Institute of Solid State Physics - Semiconductor Optics, Otto-Hahn-Allee, 28359, Bremen, Germany

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