Landolt-Börnstein - Group III Condensed Matter

Hg1–xCdxTe: binding energies (impurities and defects)

Abstract

This document is part of Volume 44 ‘Semiconductors’, Subvolume B ‘New Data and Updates for II-VI Compounds’ of Landolt-Börnstein Group III ‘Condensed Matter’. It contains data on Hg1-xCdxTe (mercury cadmium telluride), Element System Cd-Hg-Te.

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Title
Hg1–xCdxTe: binding energies (impurities and defects)
Book Title
Semiconductors
In
Data extract from Landolt-Börnstein III/44B: Semiconductors – New Data and Updates for II-VI Compounds
Book DOI
10.1007/978-3-540-74392-7
Chapter DOI
10.1007/978-3-540-74392-7_6
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
44B
Editors
  • U. Roessler Send Email (10)
  • Editor Affiliation
  • 10 Institut für Theoretische Physik, Universitaet Regensburg, 93040, Regensburg, Germany
  • Authors
  • J. Chu Send Email (1_6)
  • Author Affiliation
  • 1_6 Laboratory of Polar Materials and Devices, ECNU and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS, 200083, Shanghai, China
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