Landolt-Börnstein - Group III Condensed Matter

AlxGayIn1–x–yAs: hole mobility

Abstract

This document is part of Subvolume C ‘New Data and Updates for III-V, II-VI, I-VII Compounds’ of Volume 44 ‘Semiconductors’ of Landolt-Börnstein - Group III ‘Condensed Matter’.

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Title
AlxGayIn1–x–yAs: hole mobility
Book Title
New Data and Updates for III-V, II-VI and I-VII Compounds
In
Semiconductors - New Data and Updates for III-V, II-VI and I-VII Compounds
Book DOI
10.1007/978-3-540-92140-0
Chapter DOI
10.1007/978-3-540-92140-0_59
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
44C
Editors
  • U. Rössler Send Email (10)
  • Editor Affiliation
  • 10 Institut für Theoretische Physik, Universität Regensburg, Universitätsstraße 31, 93053, Regensburg, Germany
  • Authors
  • E. C. Fernandes da Silva Send Email (600_59)
  • Author Affiliation
  • 600_59 Laboratorio de Novos Materiais Semicondutores, Instituto de Fisica, Universidade de Sao Paulo, Rua de Matao, travessa R, 187, 05508-900, Butanta, Sao Paulo, Sao Paulo, Brazil
  • Cite this content

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