Landolt-Börnstein - Group III Condensed Matter

InSb: effective Landé g-factor

Abstract

This document is part of Subvolume D 'New Data and Updates for IV-IV; III-V; II-VI and I-VII Compounds; their Mixed Crystals and Diluted Magnetic Semiconductors' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.

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Title
InSb: effective Landé g-factor
Book Title
New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors
Book DOI
10.1007/978-3-642-14148-5
Chapter DOI
10.1007/978-3-642-14148-5_290
Part of
Landolt-Börnstein - Group III Condensed Matter
Volume
44D
Editors
  • U. Rössler Send Email (10)
  • Editor Affiliation
  • 10 Institut für Theoretische Physik, Universität Regensburg, Universitätsstraße 31, 93053, Regensburg, Germany
  • Authors
  • E. C. F. da Silva Send Email (100_290)
  • Author Affiliation
  • 100_290 Laboratorio de Novos Materiais Semicondutores, Universidade de Sao Paulo, Rua do Matao, travessa R, 187, 05508-900, Butanta, Sao Paulo, Sao Paulo, Brazil
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