Condensed Matter

Structure of domain boundaries: group IV elements and IV–IV compounds: SiC

Abstract

This chapter discusses the structure of domain boundary in silicon carbide measured using various experimental techniques.

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Title
Structure of domain boundaries: group IV elements and IV–IV compounds: SiC
Book Title
Physics of Solid Surfaces
Book DOI
10.1007/978-3-662-53908-8
Chapter DOI
10.1007/978-3-662-53908-8_40
Part of
Condensed Matter
Volume
45B
Editors
  • G. Chiarotti (1)
  • P. Chiaradia (2)
  • Editor Affiliation
  • 1 Department of Physics, University of Rome Tor Vergata, Rome, Italy
  • 2 Department of Physics, University of Rome Tor Vergata, Rome, Italy
  • Authors
  • J. Wollschläger Send Email (11)
  • Author Affiliation
  • 11 Fachbereich Physik, Universität Osnabrück, Osnabrück, Germany
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