Raman Spectroscopy for Characterization of Semiconducting Nanowires

Abstract

This chapter covers the electromagnetic radiation scattering behavior of semiconductor nanowires as it impacts their Raman scattering properties, as well as how the basic theory of Raman scattering in semiconductor crystals may be applied to the corresponding nanowire forms, with specific examples from the recent literature. The discussion then turns to more specific ways in which Raman spectroscopy can be used to precisely determine crystal structure, crystal size (or quality), composition, impurity concentration, strain, and temperature with submicron resolution, as demonstrated in recent literature examples. These qualities of Raman spectroscopy are already commonly employed in the characterization of semiconductor NWs, and one may anticipate Raman spectroscopy to be used even more widely as the applications to NW characterization are better outlined. The nondestructive nature of Raman measurements will likely lead to even more applications when combined concurrently with other in situ experiments that chemically modify the NW or apply electrical currents or mechanical strain.

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Title
Raman Spectroscopy for Characterization of Semiconducting Nanowires
Book Title
Raman Spectroscopy for Nanomaterials Characterization
Book DOI
10.1007/978-3-642-20620-7
Chapter DOI
10.1007/978-3-642-20620-7_17
Part of
Volume
Editors
  • Challa S. S. R. Kumar (1)
  • Editor Affiliation
  • 1 Center for Advanced Microstructures and Devices, Baton Rouge, LA, USA
  • Authors
  • Gregory S. Doerk (1_17)
  • Carlo Carraro (2_17)
  • Roya Maboudian (2_17)
  • Author Affiliation
  • 1_17 IBM Almaden Research Center, 650 Harry Road, San Jose, CA, 95120-6099, USA
  • 2_17 Department of Chemical and Biomolecular Engineering, University of California, 201 Gilman Hall, Berkeley, CA, 94720, USA
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