Raman Spectroscopy for Characterization of Semiconducting Nanowires

This chapter covers the electromagnetic radiation scattering behavior of semiconductor nanowires as it impacts their Raman scattering properties, as well as how the basic theory of Raman scattering in semiconductor crystals may be applied to the corresponding nanowire forms, with specific examples from the recent literature. The discussion then turns to more specific ways in which Raman spectroscopy can be used to precisely determine crystal structure, crystal size (or quality), composition, impurity concentration, strain, and temperature with submicron resolution, as demonstrated in recent literature examples. These qualities of Raman spectroscopy are already commonly employed in the characterization of semiconductor NWs, and one may anticipate Raman spectroscopy to be used even more widely as the applications to NW characterization are better outlined. The nondestructive nature of Raman measurements will likely lead to even more applications when combined concurrently with other in situ experiments that chemically modify the NW or apply electrical currents or mechanical strain.