High Resolution in STEM Mode: Individual Atom Analysis in Semiconductor Nanowires

Abstract

Aberration-corrected scanning transmission electron microscopy (STEM) in its different advanced modes such as high-angle annular dark field (HAADF), annular bright field (ABF), and middle-angle bright field (MABF) coupled to electron energy-loss spectroscopy (EELS) allows for high-resolution analysis of nanomaterials and can identify their properties at atomic scale, even on individual atoms. Among those properties, not only the atomic chemical composition but also their chemical state (oxidation, valence states or even coordination states) or localized physical properties, as their associated band gap, can be obtained on individual atomic columns or individual atoms. In this chapter we describe the application of aberration-corrected STEM in its different application modes and related spectroscopies (such as EELS and EDX) in order to correlate the structure and chemical composition at the atomic scale with the growth mechanisms and physical properties of semiconductor nanowires (NWs).

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Title
High Resolution in STEM Mode: Individual Atom Analysis in Semiconductor Nanowires
Book Title
Transmission Electron Microscopy Characterization of Nanomaterials
Book DOI
10.1007/978-3-642-38934-4
Chapter DOI
10.1007/978-3-642-38934-4_9
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Volume
Editors
  • Challa S.S.R. Kumar Send Email (1)
  • Editor Affiliation
  • 1 Center for Advanced Microstructures and Devices, Baton Rouge, Louisiana, USA
  • Authors
  • María Mata (2)
  • Jordi Arbiol Send Email (2) (3)
  • Author Affiliation
  • 2 Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, Bellaterra, CAT, Spain
  • 3 Institució Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, CAT, Spain
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