16 result(s) using Focused Search for substance: consolidated sige
If you didn't find what you were looking for, see more results.
16 result(s) using Focused Search for substance: consolidated sige
If you didn't find what you were looking for, see more results.
  1. Substance Profile

    SiGe

  2. Interactive

    Consolidated data sets with enhanced analysis tools and tailored customized data export. Find out more about SM Interactive pages

    SpringerMaterials Interactive

    Properties of SiGe

    • Custom results provided from a range of data sources, including the Landolt-Börnstein series, providing information on properties of SiGe
  3. Inorganic Solid Phases

    GeSi hyp enthalpy/energy

    • Element system: Ge-Si; Phase prototype: ZnS; Pearson symbol: cF8; Space group: 216; Data points: 1; Samples: 1; Journal references: 1
  4. Inorganic Solid Phases

    GeSi hyp energy gap

    • Element system: Ge-Si; Phase prototype: ZnS; Pearson symbol: cF8; Space group: 216; Data points: 8; Samples: 3; Journal references: 3
  5. Inorganic Solid Phases

    GeSi hyp effective mass

    • Element system: Ge-Si; Phase prototype: ZnS; Pearson symbol: cF8; Space group: 216; Data points: 6; Samples: 1; Journal references: 1
  6. Inorganic Solid Phases

    GeSi hyp elastic moduli

    • Element system: Ge-Si; Phase prototype: ZnS; Pearson symbol: cF8; Space group: 216; Data points: 1; Samples: 1; Journal references: 1
  7. Inorganic Solid Phases

    GeSi hyp valence/charge transfer

    • Element system: Ge-Si; Phase prototype: ZnS; Pearson symbol: cF8; Space group: 216; Data points: 1; Samples: 1; Journal references: 1
  8. Inorganic Solid Phases

    GeSi hyp structural transitions

    • Element system: Ge-Si; Phase prototype: ZnS; Pearson symbol: cF8; Space group: 216; Data points: 1; Samples: 1; Journal references: 1
  9. Inorganic Solid Phases

    GeSi hyp permittivity (dielectric constant)

    • Element system: Ge-Si; Phase prototype: ZnS; Pearson symbol: cF8; Space group: 216; Data points: 1; Samples: 1; Journal references: 1
  10. Landolt-Börnstein

    5.2 Layer growth by epitaxy

    This document is part of Subvolume A 'Growth and Structuring' of Volume 34 'Semiconductor Quantum Structures' of Landolt-Börnstein - Group III 'Condensed Matter'.
  11. Landolt-Börnstein

    Ge-Si (Germanium-Silicon)

    This document is part of Subvolume F ‘Ga-Gd – Hf-Zr’ of Volume 5 ‘Phase Equilibria, Crystallographic and Thermodynamic Data of Binary Alloys’ of Landolt-Börnstein - Group IV Physical Chemistry.
  12. Landolt-Börnstein

    5.3 Quasi-two-dimensional systems (quantum wells)

    This document is part of Subvolume A 'Growth and Structuring' of Volume 34 'Semiconductor Quantum Structures' of Landolt-Börnstein - Group III 'Condensed Matter'.
  13. Landolt-Börnstein

    6.3 Medium Energy Ion Scattering

    This document is part of Subvolume A of Volume 45 'Physics of Solid Surfaces' of Landolt-Börnstein - Group III 'Condensed Matter'.
  14. Landolt-Börnstein

    5.1 General remarks on group IV semiconductors and industrial needs

    This document is part of Subvolume A 'Growth and Structuring' of Volume 34 'Semiconductor Quantum Structures' of Landolt-Börnstein - Group III 'Condensed Matter'.
  15. Landolt-Börnstein

    Single and coupled quantum wells: SiGe

    This document is part of subvolume C3 'Optical Properties' of volume 34 'Semiconductor quantum structures' of Landolt-Börnstein, Group III, Condensed Matter, on the optical properties of quantum structures b...
  16. Landolt-Börnstein

    5.3.2.1 Cubic, (-4)3m (T{d})

    This document is part of Subvolume A ‘Piezooptic and Electrooptic Constants’ of Volume 30 ‘High Frequency Properties of Dielectric Crystals’ of Landolt-Börnstein - Group III Condensed Matter.
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